METHOD FOR PRODUCTION OF A SEMICONDUCTOR STRUCTURE

Production of a semiconductor structure comprises preparing a semiconductor substrate, providing a lower first, a middle second and an upper third mask layer (5,7,9) on a surface of the substrate, forming a first window (11) in the third mask layer, structuring the second mask layer using the window...

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Main Authors GENZ, OLIVER, STEGEMANN, MAIK, WEGE, STEPHAN, SCHMIDT, BARBARA, REB, ALEXANDER, MACHILL, STEFAN, KIRCHHOFF, MARKUS, STAVREV, MOMTCHIL
Format Patent
LanguageEnglish
French
German
Published 09.12.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Production of a semiconductor structure comprises preparing a semiconductor substrate, providing a lower first, a middle second and an upper third mask layer (5,7,9) on a surface of the substrate, forming a first window (11) in the third mask layer, structuring the second mask layer using the window, structuring the first mask layer using the window, enlarging the window in the third mask layer to form a second window (13), restructuring the second mask layer using the second window, structuring the substrate using the structured third mask layer, restructuring the first mask layer using the second window, and restructuring the substrate using the third mask layer.
Bibliography:Application Number: EP20030794962