SEMICONDUCTOR ELEMENT WITH STRESS-CARRYING SEMICONDUCTOR LAYER AND CORRESPONDING PRODUCTION METHOD

The invention relates to a semiconductor component with stress-absorbing semiconductor layer (SA) and an associated fabrication method, a crystalline stress generator layer (SG) for generating a mechanical stress being formed on a carrier material (1). An insulating stress transmission layer (2), wh...

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Bibliographic Details
Main Author TEMPEL, GEORG
Format Patent
LanguageEnglish
French
German
Published 31.08.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a semiconductor component with stress-absorbing semiconductor layer (SA) and an associated fabrication method, a crystalline stress generator layer (SG) for generating a mechanical stress being formed on a carrier material (1). An insulating stress transmission layer (2), which transmits the mechanical stress which has been generated to a stress-absorbing semiconductor layer (SA), is formed at the surface of the stress generator layer (SG), with the result that in addition to improved charge carrier mobility, improved electrical properties of the semiconductor component are also obtained.
Bibliography:Application Number: EP20030764890