Semiconductor memory device with magnetoresistance elements and method of writing data into the same

A semiconductor memory device includes memory cells, first wirings, a first current driver circuit (18), and a second current driver circuit (14). The memory cell includes a magneto-resistive element (20) having a first ferromagnetic film (35), an insulating film (36) formed on the first ferromagnet...

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Bibliographic Details
Main Author FUKUZUMI, YOSHIAKI
Format Patent
LanguageEnglish
French
German
Published 16.02.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A semiconductor memory device includes memory cells, first wirings, a first current driver circuit (18), and a second current driver circuit (14). The memory cell includes a magneto-resistive element (20) having a first ferromagnetic film (35), an insulating film (36) formed on the first ferromagnetic film (35), and a second ferromagnetic film (37) formed on the insulating film (36). The first wiring is provided in close proximity to and insulated from the magneto-resistive element (20). The first current driver circuit (18) supplies a first current to the first wiring in a write operation to produce a magnetic field around the magneto-resistive elements (20). The second current driver circuit (14) supplies a second current between the first and second ferromagnetic films (35, 37) via the insulating film (36) in a write and a read operation.
Bibliography:Application Number: EP20040006917