Active pixel cell using negative to positive voltage swing transfer transistor

A active pixel sensor cell is disclosed that comprises a pinned photodiode. A transfer transistor is placed between the pinned photodiode and an output node, the transfer transistor being a depletion mode N-type MOSFET A reset transistor is coupled between a high voltage rail Vdd and the output node...

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Bibliographic Details
Main Authors MANABE, SOHEI, NOZAKI, HIDETOSHI
Format Patent
LanguageEnglish
French
German
Published 26.01.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A active pixel sensor cell is disclosed that comprises a pinned photodiode. A transfer transistor is placed between the pinned photodiode and an output node, the transfer transistor being a depletion mode N-type MOSFET A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor has its gate coupled to the output node.
Bibliography:Application Number: EP20040252917