ANTIREFLECTIVE SIO-CONTAINING COMPOSITIONS FOR HARDMASK LAYER

Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity prope...

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Bibliographic Details
Main Authors BROCK, PHILLIP, MAHOROWALA, ARPAN, P, MEDEIROS, DAVID, R, PFEIFFER, DIRK, HUANG, WU-SONG, SOORIYAKUMARAN, RATNAM, ANGELOPOULOS, MARIE, BABICH, KATHERINA
Format Patent
LanguageEnglish
French
German
Published 03.06.2009
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.
Bibliography:Application Number: EP20030723925