PROCESS FOR MAKING AIR GAP CONTAINING SEMICONDUCTING DEVICES AND RESULTING SEMICONDUCTING DEVICE

• Main Authors: TOWNSEND, PAUL, H., III, FOSTER, KENNETH, L
• Format: Patent
• Language: English; French; German
• Published: 05.01.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of forming at least a partial air gap within a semiconducting device and the resulting devices, said method comprising the steps of: (a) depositing a sacrificial polymeric composition in one or more layers of the device during its formation; (b) coating the device with one or more layers of...