PROCESS FOR MAKING AIR GAP CONTAINING SEMICONDUCTING DEVICES AND RESULTING SEMICONDUCTING DEVICE
A method of forming at least a partial air gap within a semiconducting device and the resulting devices, said method comprising the steps of: (a) depositing a sacrificial polymeric composition in one or more layers of the device during its formation; (b) coating the device with one or more layers of...
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Main Authors | , |
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Format | Patent |
Language | English French German |
Published |
05.01.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A method of forming at least a partial air gap within a semiconducting device and the resulting devices, said method comprising the steps of: (a) depositing a sacrificial polymeric composition in one or more layers of the device during its formation; (b) coating the device with one or more layers of a relatively non-porous, organic, polymeric, insulating dielectric material (hardmask) having a density less than 2.2 g/cm3; and (c) decomposing the sacrificial polymeric composition such that the decomposition products permeate at least partially through the one or more hardmask layers, thereby forming at least a partial air gap within the device. |
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Bibliography: | Application Number: EP20030728320 |