SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR WITH OVERGROWN BASE REGION

Silicon carbide bipolar junction transistors having an overgrown base layer are provided. The bipolar junction transistors can be made with a very thin (e.g., 0.3 mum or less) base layer while still possessing adequate peripheral base resistance values. Self aligning manufacturing techniques for mak...

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Bibliographic Details
Main Authors CASADY, JANNA, B, SANKIN, IGOR
Format Patent
LanguageEnglish
French
German
Published 12.03.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Silicon carbide bipolar junction transistors having an overgrown base layer are provided. The bipolar junction transistors can be made with a very thin (e.g., 0.3 mum or less) base layer while still possessing adequate peripheral base resistance values. Self aligning manufacturing techniques for making the silicon carbide bipolar junction transistors are also provided. Using these techniques, the spacing between emitter and base contacts on the device can be reduced. The silicon carbide bipolar junction transistors can also be provided with edge termination structures such as guard rings to increase the blocking capabilities of the device.
Bibliography:Application Number: EP20030709157