Method of forming conductive line for semiconductor device using carbon nanotube and semiconductor device manufactured using the method

• Main Authors: BAE, EUN-JU, CHOI, WON-BONG, HORII, HIDEKI
• Format: Patent
• Language: English; French; German
• Published: 09.05.2012
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS THEREOF; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; INORGANIC CHEMISTRY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; NANOTECHNOLOGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; PHYSICS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; STATIC STORES; TRANSPORTING

Provided are a method of forming a conductive line for a semiconductor device using a carbon nanotube and a semiconductor device manufactured using the method. The method includes: activating a surface of an electrode (120) of the semiconductor device using surface pretreatment; forming an insulating layer (130) on the electrode, and forming a contact hole (132) in the insulating layer in such a way that a part of the activated surface (122) of the electrode is exposed outside; and feeding a carbon-containing gas on the activated surface of the electrode via the contact hole to grow a carbon nanotube (140), which forms the conductive line, on the activated surface of the electrode. The activation step of the electrode surface can be replaced with formation step of a catalytic metal layer on the electrode surface. According to the method, the carbon nanotube with a high current density forms a conductive line for a semiconductor device, and thus, an ultra-highly integrated semiconductor device can be manufactured.