LIGHT DETECTION DEVICE, IMAGING DEVICE AND DISTANT IMAGE ACQUISITION DEVICE

A photosensitive region includes a semiconductor substrate 40 made of a P-type semiconductor, and N-type semiconductor regions 41 and 42 formed on the surface of the semiconductor substrate 40. Accordingly, each photosensitive portion includes a portion of the semiconductor substrate 40 and a pair o...

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Bibliographic Details
Main Authors TOYODA, HARUYOSHI, SUGIYAMA, YUKINOBU, MUKOZAKA, NAOHISA, MIZUNO, SEIICHIRO
Format Patent
LanguageEnglish
French
German
Published 18.09.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GYROSCOPIC INSTRUMENTS
MEASURING
MEASURING DISTANCES, LEVELS OR BEARINGS
NAVIGATION
PHOTOGRAMMETRY OR VIDEOGRAMMETRY
PHYSICS
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
SURVEYING
TESTING
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Summary:A photosensitive region includes a semiconductor substrate 40 made of a P-type semiconductor, and N-type semiconductor regions 41 and 42 formed on the surface of the semiconductor substrate 40. Accordingly, each photosensitive portion includes a portion of the semiconductor substrate 40 and a pair of the regions 41 and 42, thus configuring a photodiode. Each of the regions 41 and 42 is in a shape of an approximate triangle, and is formed so that one side of the regions 41 is adjacent to one side of the region 42, and vice versa, in one pixel. A first wire 44 is for electrically connecting the regions 41 on one side in each pixel across a first direction, and is provided extending in the first direction between the pixels. The secondwire 47 is for electrically connecting the regions 47 on the other side in each pixel across a second direction, and is provided extending in the second direction between the pixels.
Bibliography:Application Number: EP20020783780