METHOD FOR FORMING AN OXYNITRIDE SPACER FOR A METAL GATE ELECTRODE USING A PECVD PROCESS WITH A SILICON-STARVING ATMOSPHERE
A semiconductor device including a semiconductor substrate; a metal gate electrode; and a silicon oxynitride spacer formed on a surface of the metal gate electrode, wherein an interface of the silicon oxynitride spacer and the metal gate electrode is substantially free of metal silicide. In one embo...
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Main Authors | , |
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Format | Patent |
Language | English French German |
Published |
25.08.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device including a semiconductor substrate; a metal gate electrode; and a silicon oxynitride spacer formed on a surface of the metal gate electrode, wherein an interface of the silicon oxynitride spacer and the metal gate electrode is substantially free of metal silicide. In one embodiment, the silicon oxynitride spacer includes a first portion and a second portion, in which the first portion is formed under starving silicon conditions. |
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Bibliography: | Application Number: EP20020784088 |