METHOD FOR PHOTOLITHOGRAPHIC STRUCTURING BY MEANS OF A CARBON HARD MASK LAYER WHICH HAS A DIAMOND-LIKE HARDNESS AND IS PRODUCED BY MEANS OF A PLASMA-ENHANCED DEPOSITION METHOD
A carbon hard mask layer is applied to a substrate to be patterned by means of a plasma-enhanced deposition process in such a manner that it has a hardness comparable to that of diamond in at least one layer thickness section. During the production of this diamond-like layer thickness section, the p...
Saved in:
Main Authors | , , , , , |
---|---|
Format | Patent |
Language | English French German |
Published |
11.08.2004
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A carbon hard mask layer is applied to a substrate to be patterned by means of a plasma-enhanced deposition process in such a manner that it has a hardness comparable to that of diamond in at least one layer thickness section. During the production of this diamond-like layer thickness section, the parameters used in the deposition are set in such a manner that growth regions which are produced in a form other than diamond-like are removed again in situ by means of subsequent etching processes and that diamond-like regions which are formed are retained. |
---|---|
Bibliography: | Application Number: EP20020776865 |