LATERAL ISOLATED GATE BIPOLAR TRANSISTOR DEVICE

A lateral isolated gate bipolar transistor (LIGBT) device comprises a substrate (20) and a buried oxide layer (22) on the substrate; a silicon layer (24) on the buried oxide layer, the silicon layer having a laterally extending drift region (26); an emitter/cathode (28) on top of the silicon layer,...

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Main Authors VAN ZWOL, JOHANNES, EMMERIK, ARNOLDUS, J., M, ZINGG, RENE, P
Format Patent
LanguageEnglish
French
German
Published 04.08.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A lateral isolated gate bipolar transistor (LIGBT) device comprises a substrate (20) and a buried oxide layer (22) on the substrate; a silicon layer (24) on the buried oxide layer, the silicon layer having a laterally extending drift region (26); an emitter/cathode (28) on top of the silicon layer, a collector/anode (30) on top of the silicon layer and laterally separated from the emitter/cathode (28); a dielectric layer (42), e.g. thermally grown oxide, in between the emitter/cathode (28) and the collector/anode (30); a gate electrode (34) on top of the silicon layer (24); and a field plate (38, 40) extending on top or within the field oxide layer to almost an end thereof adjacent to the collector/anode. The region of the silicon layer (24) between an end (46) of the field plate adjacent to the collector/anode (30) and below the level of the field plate (38, 40) and the collector/anode (30) has a Gummel number sufficient to suppress a parasitic bipolar effect at the collector/anode (30) of the LIGBT.
Bibliography:Application Number: EP20020802340