Semiconductor laser device and method of manufacturing the same

An improved semiconductor laser device (1) is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element (2) including a laser oscillation section (5) provided with a ridge waveguide (6) and formed by forming a group III nitr...

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Bibliographic Details
Main Authors KIMURA, YOSHINORI, WATANABE, ATSUSHI, TAKAHASHI, HIROKAZU, MIYACHI, MAMORU
Format Patent
LanguageEnglish
French
German
Published 30.06.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:An improved semiconductor laser device (1) is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element (2) including a laser oscillation section (5) provided with a ridge waveguide (6) and formed by forming a group III nitride semiconductor film on a substrate (SUB1), an insulating layer (7) and an ohmic electrode layer (8), ii) a second light emitting element (3) including a laser oscillation section (9) provided with a waveguide (10) and formed by forming III-V compound semiconductor film, an insulating layer (11) and an ohmic electrode layer (12). By virtue of the adhesive metal layer interposed between the two ohmic electrode layers (8,12), the two laser oscillation sections (5,9) are combined together, thereby forming the improved semiconductor laser device (1)which has a small distance between laser light emitting spots of the two laser oscillation sections (5,9).
Bibliography:Application Number: EP20030029193