SOURCE REAGENT COMPOSITION FOR CVD FORMATION OF Zr/Hf DOPED GATE DIELECTRIC AND HIGH DIELECTRIC CONSTANT METAL OXIDE THIN FILMS AND METHOD OF USING SAME

• Main Authors: XU, CHONGYING, BAUM, THOMAS, H, PAW, WITOLD, ROEDER, JEFFREY, F, WANG, ZIYUN, HENDRIX, BRIAN, C
• Format: Patent
• Language: English; French; German
• Published: 04.07.2007
• Subjects: ACYCLIC OR CARBOCYCLIC COMPOUNDS; ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; ADHESIVES; CHEMICAL PAINT OR INK REMOVERS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CORRECTING FLUIDS; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; FILLING PASTES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INKS; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; ORGANIC CHEMISTRY; PAINTS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; POLISHES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; USE OF MATERIALS THEREFOR; WOODSTAINS

Chemical vapor deposition (CVD) precursor compositions for forming Zr/Hf doped gate dielectric, ferroelectric, or high dielectric constant (k) metal oxide thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(beta-diketonate)2(OR)2, wherein M is Zr or Hf, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.