An optoelectronic device and a large-area array of optoelectronic pixels
An optoelectronic device (1) is essentially formed by two fibers (2, 3), each of which has an electrode (21, 31). An optically active layer (41) is located on the second fiber (3). The two fibers (2, 3) are arranged so as to intersect and be in contact at the intersection (5). Thus a stack structure...
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Main Author | |
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Format | Patent |
Language | English French German |
Published |
10.12.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | An optoelectronic device (1) is essentially formed by two fibers (2, 3), each of which has an electrode (21, 31). An optically active layer (41) is located on the second fiber (3). The two fibers (2, 3) are arranged so as to intersect and be in contact at the intersection (5). Thus a stack structure (21, 41, 31) needed for optoelectronic devices is formed at the intersection. Such a stack structure (21, 41, 31) comprises a first electrode (21), e.g., an anode, an optically active layer (41) and a second electrode (31), e.g., a cathode. This resulting sandwich structure (21, 41, 31) forms a light-emitting device, a photosensitive device and/or a photovoltaic cell, depending on the operation conditions and the material composition. Large light-emitting, light-detecting and/or photovoltaic arrays may be fabricated by weaving a plurality of such fibers (2, 3). The arrays are structured in pixels (1) which can be individually addressed. Such woven pixel arrays are simple, reliable, cheap, and allow mass production of large-area devices of up to many square meters. |
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Bibliography: | Application Number: EP20020405609 |