Ion plating method and system for forming a wiring on a semiconductor device

In an ion plating system, a wafer (201) ion which a semiconductor wiring film of e.g. Cu is to be formed is held by a wafer substrate holder (3) disposed in a vacuum chamber (2); the material of the semiconductor wiring film is evaporated by an evaporation source (4) disposed in the vacuum chamber;...

Full description

Saved in:
Bibliographic Details
Main Authors MARUNAKA, MASAO, DOI, TOSHIYA, TAKIGAWA, SHIROU, OTAKE, KIYOSHI, NOSE, KOUICHI
Format Patent
LanguageEnglish
French
German
Published 09.07.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online AccessGet full text

Cover

More Information
Summary:In an ion plating system, a wafer (201) ion which a semiconductor wiring film of e.g. Cu is to be formed is held by a wafer substrate holder (3) disposed in a vacuum chamber (2); the material of the semiconductor wiring film is evaporated by an evaporation source (4) disposed in the vacuum chamber; and a high frequency electric power for generating a plasma in the vacuum chamber, making use of the substrate holder as an electrode is supplied from a high frequency power source (10).
Bibliography:Application Number: EP20020258686