Tunneling emitters and method of making

An emitter (100) has an electron supply layer (10) and a tunneling layer (20) formed on the electron supply layer. Optionally, an insulator layer (78) is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer (14) is formed on the...

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Bibliographic Details
Main Authors CHEN, ZHIZHANG, RAMAMOORTHI, SRIRAM
Format Patent
LanguageEnglish
French
German
Published 01.12.2004
Edition7
Subjects
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Summary:An emitter (100) has an electron supply layer (10) and a tunneling layer (20) formed on the electron supply layer. Optionally, an insulator layer (78) is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer (14) is formed on the tunneling layer. A conductive layer (82) is partially disposed on the cathode layer and partially on the insulator layer if present. The conductive layer defines an opening to provide a surface for energy emissions (22) of electrons (16) and/or photons (18). Preferably but optionally, the emitter is subjected to an annealing process (120,122) thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
Bibliography:Application Number: EP20020257304