Tunneling emitters and method of making
An emitter (100) has an electron supply layer (10) and a tunneling layer (20) formed on the electron supply layer. Optionally, an insulator layer (78) is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer (14) is formed on the...
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Main Authors | , |
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Format | Patent |
Language | English French German |
Published |
01.12.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | An emitter (100) has an electron supply layer (10) and a tunneling layer (20) formed on the electron supply layer. Optionally, an insulator layer (78) is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer (14) is formed on the tunneling layer. A conductive layer (82) is partially disposed on the cathode layer and partially on the insulator layer if present. The conductive layer defines an opening to provide a surface for energy emissions (22) of electrons (16) and/or photons (18). Preferably but optionally, the emitter is subjected to an annealing process (120,122) thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer. |
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Bibliography: | Application Number: EP20020257304 |