VARIABLE CAPACITANCE CAPACITOR

The invention concerns a variable capacitance capacitor comprising a periodic structure of raised zones (5) separated by recesses (6) formed in a type N semiconductor substrate (1). The walls of the raised zones and the base of the recesses are coated with a conductive layer (9, 10). The substrate i...

Full description

Saved in:
Bibliographic Details
Main Authors LAUR, JEAN-PIERRE, HAKIM, HEDI, SANCHEZ, JEAN-LOUIS, BREIL, MARIE, AUSTIN, PATRICK, JALADE, JEAN
Format Patent
LanguageEnglish
French
German
Published 29.03.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The invention concerns a variable capacitance capacitor comprising a periodic structure of raised zones (5) separated by recesses (6) formed in a type N semiconductor substrate (1). The walls of the raised zones and the base of the recesses are coated with a conductive layer (9, 10). The substrate is connected to a first terminal (A) of the capacitor and the conductive layer to a second terminal (B) of the capacitor. At least the base of the recesses or the side of the raised zones comprises type P regions (8), the pitch of the raised parts being selected so that the space charging zones linked to the type P regions are joined when the voltage difference between said terminals exceeds a predetermined threshold. The zones not comprising type P regions are coated with an insulant (7) and a highly doped N region (10) is formed beneath the insulant.
Bibliography:Application Number: EP20010931828