SEMICONDUCTOR DEVICE COMPRISING AN INSULATED GATE BIPOLAR TRANSISTOR AND A FREE-WHEEL DIODE

This invention relates to an insulated gate bipolar transistor, a semiconductor device using such a transistor and manufacturing methods of these, and in particular, its object is to eliminate the necessity of connection to a freewheel diode used for bypassing a circulating current. In order to achi...

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Bibliographic Details
Main Authors TAKAHASHI, H, TABATA, M, TOMOMATSU, Y
Format Patent
LanguageEnglish
French
German
Published 02.01.2003
Edition7
Subjects
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS
BASIC ELECTRIC ELEMENTS
CONTROL OR REGULATION THEREOF
CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
SEMICONDUCTOR DEVICES
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Summary:This invention relates to an insulated gate bipolar transistor, a semiconductor device using such a transistor and manufacturing methods of these, and in particular, its object is to eliminate the necessity of connection to a freewheel diode used for bypassing a circulating current. In order to achieve this object, the concentration of impurities of an N<+> buffer layer (12) that forms a junction with a P<+> collector layer (11) is increased so that it is possible to reduce an avalanche breakdown voltage of a parasitic diode (D) formed by an N base layer (12, 13) and the P<+> collector layer (11). Thus, the reverse voltage resistance of an IGBT (101) is lowered to not more than 5 times the collector-emitter saturated voltage (VCE(sat)).
Bibliography:Application Number: EP20010273674