Dielectric BMN composition
The invention provides a dielectric composition based on a BaO-MgO-Nb2O5 system material (BMN system material) having a dielectric constant epsilon f of about 30, a large Q-value as a no-load quality coefficient and a comparatively small absolute value of the temperature coefficient tau f of its res...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English French German |
Published |
02.01.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a dielectric composition based on a BaO-MgO-Nb2O5 system material (BMN system material) having a dielectric constant epsilon f of about 30, a large Q-value as a no-load quality coefficient and a comparatively small absolute value of the temperature coefficient tau f of its resonance frequency but containing no expensive Ta. The dielectric material has a composite perovskite crystal structure as the main crystal phase, wherein a predetermined amount of KNbO3 is added to a BMN system material. High frequency characteristics can be further improved by partially replacing Nb with Sb and partially replacing the B site of the perovskite crystal structure with Sn. |
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Bibliography: | Application Number: EP20020254258 |