Dielectric BMN composition

The invention provides a dielectric composition based on a BaO-MgO-Nb2O5 system material (BMN system material) having a dielectric constant epsilon f of about 30, a large Q-value as a no-load quality coefficient and a comparatively small absolute value of the temperature coefficient tau f of its res...

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Bibliographic Details
Main Authors KASASHIMA, TAKASHI, MATSUMIYA, MASAHIKO, SATO, MANABU, OTSUKA, JUN, OBA, TAKASHI, YAMAGIWA, KATSUYA, ITAKURA, KAZUHISA
Format Patent
LanguageEnglish
French
German
Published 02.01.2003
Edition7
Subjects
ARTIFICIAL STONE
BASIC ELECTRIC ELEMENTS
CABLES
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
CONCRETE
CONDUCTORS
ELECTRICITY
INORGANIC CHEMISTRY
INSULATORS
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SLAG
TREATMENT OF NATURAL STONE
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Summary:The invention provides a dielectric composition based on a BaO-MgO-Nb2O5 system material (BMN system material) having a dielectric constant epsilon f of about 30, a large Q-value as a no-load quality coefficient and a comparatively small absolute value of the temperature coefficient tau f of its resonance frequency but containing no expensive Ta. The dielectric material has a composite perovskite crystal structure as the main crystal phase, wherein a predetermined amount of KNbO3 is added to a BMN system material. High frequency characteristics can be further improved by partially replacing Nb with Sb and partially replacing the B site of the perovskite crystal structure with Sn.
Bibliography:Application Number: EP20020254258