Single electron memory device and method for manufacturing the same

A single electron memory device comprising quantum dots between a gate electrode and a single electron storage element and a method for manufacturing the same are provided. The single electron memory device includes a substrate (40) on which a nano scale channel region (C) is formed between a source...

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Bibliographic Details
Main Authors CHAE, HEE-SOON, RYU, WON-IL, KIM, BYONG-MAN, CHAE, SOO-DOO, KIM, MOON-KYUNG
Format Patent
LanguageEnglish
French
German
Published 01.12.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A single electron memory device comprising quantum dots between a gate electrode and a single electron storage element and a method for manufacturing the same are provided. The single electron memory device includes a substrate (40) on which a nano scale channel region (C) is formed between a source (42) and a drain (44), and a gate lamination pattern (P) including quantum dots (50a) on the channel region (C). The gate lamination pattern (P) includes a lower layer (46) formed on the channel region (C), a single electron storage medium (48) storing a single electron tunneling through the lower layer formed on the lower layer (46), an upper layer (50) including quantum dots (50a) formed on the single electron storage medium (48), and a gate electrode (52) formed on the upper layer (50) to be in contact with the quantum dots (50a).
Bibliography:Application Number: EP20020250034