Nitride semiconductor laser device and method for manufacturing the same

A nitride semiconductor laser device includes a multi-layer body comprising a specified group-III nitride semiconductor crystal layer, and a substrate which is highly cleavable. The multi-layer body and the substrate are glued upon each other and the substrate has a cut-out portion near a laser face...

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Bibliographic Details
Main Authors MIYACHI, MAMORU, OTA, HIROYUKI
Format Patent
LanguageEnglish
French
German
Published 09.10.2002
Edition7
Subjects
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Summary:A nitride semiconductor laser device includes a multi-layer body comprising a specified group-III nitride semiconductor crystal layer, and a substrate which is highly cleavable. The multi-layer body and the substrate are glued upon each other and the substrate has a cut-out portion near a laser facet of the multi-layer body. A nitride semiconductor laser device includes a multi-layer body (2) comprising group-III nitride semiconductor crystal layer(s), and a substrate (3) which is highly cleavable. The group-III nitride semiconductor crystal layer comprises aluminum-gallium-indium nitride of formula (AlxGa1-x)1-yInN. The multi-layer body and the substrate are glued upon each other, and the substrate has a cut-out portion (6) near a laser facet of the multi-layer body. x, y : 0-1. An independent claim is included for a method of manufacturing the nitride semiconductor laser device. The method involves forming a laser wafer by stacking the multi-layer body on a first substrate (10); forming a cut-out portion on a second substrate; aligning and gluing a surface of the second substrate; removing the first substrate from the laser wafer; and forming a cavity mirror by cleaving a glued body comprising the second substrate and the multi-layer body.
Bibliography:Application Number: EP20020007418