Method of forming a dielectric interlayer film with organosilicon precursors
A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound c...
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Main Authors | , , , , |
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Format | Patent |
Language | English French German |
Published |
18.09.2013
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Subjects | |
Online Access | Get full text |
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Summary: | A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. The films formed by the above method. |
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Bibliography: | Application Number: EP20020001014 |