EXTREME ULTRAVIOLET SOFT X-RAY PROJECTION LITHOGRAPHIC METHOD SYSTEM AND LITHOGRAPHY ELEMENTS
The projection lithographic method for producing integrated circuits and forming patterns with extremely small feature dimensions includes an illumination sub-system (36) for producing and directing an extreme ultraviolet soft x-ray radiation λ from an extreme ultraviolet soft x-ray source (38); a m...
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Main Authors | , |
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Format | Patent |
Language | English French German |
Published |
23.08.2006
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Subjects | |
Online Access | Get full text |
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Summary: | The projection lithographic method for producing integrated circuits and forming patterns with extremely small feature dimensions includes an illumination sub-system (36) for producing and directing an extreme ultraviolet soft x-ray radiation λ from an extreme ultraviolet soft x-ray source (38); a mask stage (22) illuminated by the extreme ultraviolet soft x-ray radiation λ produced by illumination stage and the mask stage (22) includes a pattern when illuminated by radiation λ. A protection sub-system includes reflective multilayer coated Ti doped high purity SiO2 glass defect free surface (32) and printed media subject wafer which has a radiation sensitive surface. |
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Bibliography: | Application Number: EP20000948609 |