An optoelectronic device doped to augment an optical power threshold for bandwidth collapse and a method of manufacturing therefor

An improved optoelectronic device and a method of manufacture therefor. The optoelectronic device includes a doped buffer layer (320) located over a substrate (310) having an optical window (315) formed therein and an absorber layer (330) located over the doped buffer layer (320). The optoelectronic...

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Bibliographic Details
Main Authors ONAT, BORA M, YODER, P. DOUGLAS, GRUEZKE, LEONARD A, LANG, DAVID V, FLYNN, EDWARD J
Format Patent
LanguageEnglish
French
German
Published 17.04.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An improved optoelectronic device and a method of manufacture therefor. The optoelectronic device includes a doped buffer layer (320) located over a substrate (310) having an optical window (315) formed therein and an absorber layer (330) located over the doped buffer layer (320). The optoelectronic device further includes a doped region (350) located over the absorber layer (330) and having a dopant tail (355) that extends substantially through the absorber layer (330), and the doped buffer layer (320) and the dopant tail (355) are doped to augment an optical power threshold for bandwidth collapse of the optoelectronic device.
Bibliography:Application Number: EP20010307817