Sidewall process to improve the flash memory cell performance

A method of forming a FLASH memory device having a conductive line (24) which crosses a trench isolation structure (70). The method involves forming nitride sidewalls (125) to protect the stack during the SAS etch process.

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Bibliographic Details
Main Authors YUAN, JESSIE, MEHRAD, FREIDOON, AMBROSE, THOMAS M
Format Patent
LanguageEnglish
French
German
Published 27.03.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A method of forming a FLASH memory device having a conductive line (24) which crosses a trench isolation structure (70). The method involves forming nitride sidewalls (125) to protect the stack during the SAS etch process.
Bibliography:Application Number: EP20010000490