VACUUM PROCESSING APPARATUS

• Main Author: AMANO, HIDEAKI
• Format: Patent
• Language: English; French; German
• Published: 12.03.2008
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; THEIR RELEVANT APPARATUS; TRANSPORTING

In a plasma CVD apparatus for applying a film deposition process to a semiconductor wafer (W), a wafer placement stage (3) is provided at a center of a vacuum chamber (2). The placement stage (3) is mounted to a side wall (63) via a support part (6). An exhaust port (9) having a diameter equal to or smaller than a diameter of the placement stage (3) is provided under the placement stage (3). A center axis (C1) of the exhaust port (9) is displaced from a center axis of the placement stage (3) in a direction opposite to an extending direction of the support part (6), thereby achieving an efficient exhaust.