Process for producting an epitaxial layer on a semiconductor wafer

Production of a semiconductor wafer having front and rear sides and an epitaxial layer made from semiconductor material deposited on the front side comprises: (a) preparing a wafer having a polished front side and a predetermined thickness; (b) pretreating the front side of the wafer in the presence...

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Bibliographic Details
Main Authors SIEBERT, WOLFGANG, SCHAUER, REINHARD, MESSMANN, KLAUS, SCHMOLKE, RUEDIGER, OBERMEIER, GUENTHER, GRAEF, DIETER, STORCK, PETER
Format Patent
LanguageEnglish
French
German
Published 11.09.2002
Edition7
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:Production of a semiconductor wafer having front and rear sides and an epitaxial layer made from semiconductor material deposited on the front side comprises: (a) preparing a wafer having a polished front side and a predetermined thickness; (b) pretreating the front side of the wafer in the presence of gaseous HCl and a silane source at 950-1,250 degrees C in a epitaxy reactor so that the thickness of the wafer remains unchanged; and (c) depositing the epitaxial layer on the front side of the pretreated wafer. Preferred Features: The polished front side is produced in a single polishing step. The silane source is selected from silane, dichlorosilane, trichlorosilane or tetrachlorosilane.
Bibliography:Application Number: EP20010111147