SEMICONDUCTOR DEVICE

The invention relates to a high-voltage deep depletion transistor, provided in a semiconductor body ( 1 ) having a substrate ( 2 ) of a first conductivity type, for example the p-type, and a surface layer ( 3 ) of the opposite conductivity type, for example the n-type for an n-channel transistor. To...

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Bibliographic Details
Main Authors LUDIKHUIZE, ADRIANUS, W, MEEUWSEN, CONSTANTINUS, P
Format Patent
LanguageEnglish
French
German
Published 28.11.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a high-voltage deep depletion transistor, provided in a semiconductor body ( 1 ) having a substrate ( 2 ) of a first conductivity type, for example the p-type, and a surface layer ( 3 ) of the opposite conductivity type, for example the n-type for an n-channel transistor. To prevent formation of inversion layers below the gate, the channel is subdivided into a plurality of sub-channel regions ( 7 a , 7 b , 7 c , 7 c) mutually separated by p-type regions ( 11 a , 11 b , 11 c , 11 d) which serve to remove generated holes. The p-type regions extend across the whole thickness of the channel and are contacted via the substrate. Each sub-channel region may be subdivided further by intermediate p-type regions ( 13 ) to improve the removal of holes.
Bibliography:Application Number: EP20000985140