SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

In a semiconductor device, a contact layer is provided between a silicon-containing insulating film SiO2, etc. or a metal wiring layer, and a fluorine-containing carbon CF film to increase their adhesion. For this purpose, SiC film deposition gases, such as SiH4 gas and C2H4 gas, are excited into pl...

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Bibliographic Details
Main Author ENDO, SHUNICHI
Format Patent
LanguageEnglish
French
German
Published 08.08.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a semiconductor device, a contact layer is provided between a silicon-containing insulating film SiO2, etc. or a metal wiring layer, and a fluorine-containing carbon CF film to increase their adhesion. For this purpose, SiC film deposition gases, such as SiH4 gas and C2H4 gas, are excited into plasma to stack a SiC film 200 as the contact layer on the top surface of a SiO2 film 110. After that, switching of deposition gases is conducted for about 1 second by introducing SiH4 gas, C2H4 gas, C4F8 gas and C2H4 gas. Subsequently, CF film deposition gases, such as C4F8 gas and C2H4 gas, for example, are excited into plasma to deposite a CF film 120 on the SiC film 200. In this way, both the SiC film deposition gases and the CF film deposition gases exist simultaneously during the deposition gas switching step, whereby Si-C bonds are produced near the boundary between the SiC film 200 and the CF film 120 across these films, and they enhance adhesion between these films and hence increase adhesion of the SiO2 film 110 and the CF film 120.
Bibliography:Application Number: EP19990970209