Passive alignment of optoelectronic components to optical waveguides using flip-chip bonding technology

In an apparatus for alignment of an optical waveguide with a photonic device (405) the optical waveguide for transmission of light therethrough has an extremity (403) at which a beam of light (S) is input into or output from the optical waveguide. The photonic device (405) has a central region (407)...

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Bibliographic Details
Main Authors KANESHIRO, RONALD T, HAHN, KENNETH H
Format Patent
LanguageEnglish
French
German
Published 05.02.2003
Edition7
Subjects
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Summary:In an apparatus for alignment of an optical waveguide with a photonic device (405) the optical waveguide for transmission of light therethrough has an extremity (403) at which a beam of light (S) is input into or output from the optical waveguide. The photonic device (405) has a central region (407) at which a beam of light is input in or output from the photonic device (405) on a surface of the photonic device. Further a first and a second pair of wetable pads is provided, the first pair including a first wetable pad directly attached to the phontonic device and a second wetable pad directly attached to a substrate (415). The second pair of wetable pads (409, 411) includes a third wetable pad (409) directly attached to the waveguide at a first lateral distance (D1) from the extremity of the waveguide, and a fourth wetable pad (411) directly attached to the substrate (415) at a second lateral distance (D2) from the central portion of the photonic device substantially equal to the first lateral distance. A first bond causes a self-alignment of the first pad and the second pad, and a second bond (413) causes a self-alignment of the third pad and the fourth pad, the second bond together with the first bond providing a desired optical alignment of the extremity of the optical waveguide with the central portion of the photonic device. The first bond and the second bond have a height in the range of 70 mu m to 80 mu m, and said wetable pads have a width dimension of approximately 100 mu m.
Bibliography:Application Number: EP20010100336