SEMICONDUCTOR PACKAGE, SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR PACKAGE

An insulating layer (3) is formed on a Si wafer (1). An opening portion is made in this insulating layer (3), and subsequently a rerouting layer (2) is formed. Next, a resin layer (4) is formed on the rerouting layer (2). The resin layer (4) is then cured so that the rerouting layer (2) and a Cu foi...

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Bibliographic Details
Main Authors INABA, MASATOSHI, KAIZU, MASAHIRO, OMINATO, TADANORI, SUZUKI, TAKANAO, KUROSAKA, AKIHITO
Format Patent
LanguageEnglish
French
German
Published 27.02.2008
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An insulating layer (3) is formed on a Si wafer (1). An opening portion is made in this insulating layer (3), and subsequently a rerouting layer (2) is formed. Next, a resin layer (4) is formed on the rerouting layer (2). The resin layer (4) is then cured so that the rerouting layer (2) and a Cu foil (5) are bonded to each other through the resin layer (4). Thereafter, a ring-like opening portion (4a) is made in the resin layer (4), and a Cu plating layer (8) is formed inside this opening portion (4a).
Bibliography:Application Number: EP20000935648