Analog switch including two complementary MOS field-effect transistors

• Main Author: STEINHAGEN, WOLFGANG
• Format: Patent
• Language: English; French; German
• Published: 16.05.2001
• Edition: 7
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; PULSE TECHNIQUE

An analog switch includes two complementary MOS field-effect transitors (10, 12) whose source-drain circuits are located in parallel between the input terminal (18) and the output terminal (20) of the switch. A control signal for controlling the switch is applied to the gate of the MOS field-effect transistor (12) of the one channel type directly and to the gate of the MOS field-effect transistor (10) of the other channel type via a negator (16). Between the input terminal (18) and output terminal (20) of the switch the series source-drain circuits of three MOS field-effect transistors (22, 24, 26) are inserted, whereby the MOS field-effect transistor (24) located in the middle of the series circuit has a channel type opposite that of the other two MOS field-effect transistors (22, 26). The gates of all MOS field-effect transistors of the other channel type are each interconnected. The threshold voltages of the three MOS field-effect transistors (22, 24, 26) of the series circuit are lower than the threshold voltages of the two complementary MOS field-effect transitors (10, 12) whose source-drain circuits are connected in parallel.