Method for fabricating thin film devices

• Main Authors: KIZILOGLU, KURSAD, FIELDS, CHARLES H, SCHMITZ, ADELE E
• Format: Patent
• Language: English; French; German
• Published: 07.01.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A device and a method for making a thin film device on integrated circuits, especially useful for HBT and HEMT ICs. The method comprises the steps of applying (200) a first photoresist layer (102) to a first surface (106, 108), and patterning (202) the first photoresist layer (102) to have at least a first opening (104) that exposes the first surface (106, 108). A film (110) is deposited onto the first photoresist layer (102), wherein a portion of the deposited film (110) is deposited onto the exposed first surface (108). A second photoresist layer (112) is applied (206) onto the deposited film (110), wherein the second photoresist layer (110) is applied to the portion of the deposited film (110) within the first opening (104) and covers a second portion of the deposited film (110). The deposited film (110), first photoresist layer (102), and second photoresist layer (112) are selectively removed (210, 212), therein exposing the first surface (106, 108) and the second portion of the deposited film (110). A device (116) in accordance with the present invention comprises a device formed within a semiconductor structure and a deposited film (110), coupled to the device. The deposited film (110) is directly coupled to a first surface (106, 108) of a semiconductor wafer, wherein the semiconductor wafer contains the semiconductor structure, and the deposited film (110) is defined by a first photoresist layer (102) and a second photoresist layer (112). The first photoresist layer (102) limits the coupling of the deposited film (110) to the first surface, and the second photoresist layer (112) defines a pattern of the deposited film (110) (Fig. 2D).