SEMICONDUCTOR PRESSURE SENSOR AND ITS MANUFACTURING METHOD

That portion of an n-type single-crystal Si layer 1 which corresponds to a pressure-sensitive region is etched to an SiO2 layer 2 by using the SiO2 layer 2 as an etching stopper layer. The SiO2 layer 2 exposed by this etching is removed. The pressure-sensitive region of the n-type single-crystal Si...

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Bibliographic Details
Main Authors YONEDA, MASAYUKI, GOSHOO, YASUHIRO, TOUJYOU, HIROFUMI, FUKIURA, TAKESHI
Format Patent
LanguageEnglish
French
German
Published 25.07.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:That portion of an n-type single-crystal Si layer 1 which corresponds to a pressure-sensitive region is etched to an SiO2 layer 2 by using the SiO2 layer 2 as an etching stopper layer. The SiO2 layer 2 exposed by this etching is removed. The pressure-sensitive region of the n-type single-crystal Si layer 3 is etched by a predetermined amount to form a diaphragm 4. Thus, the SiO2 layer 2 is removed from the diaphragm 4 and a diaphragm edge portion 6.
Bibliography:Application Number: EP19990973325