THIN FILM TRANSISTORS

A thin film transistor has source (20) and drain (10) electrodes which each comprise a coiled elongate portion. One (14) of these portions coils inwardly to a central connector portion (12), and the other (22) coils outwardly to a peripheral connector portion (16). The two coiled portions are interl...

Full description

Saved in:
Bibliographic Details
Main Author POWELL, MARTIN, J
Format Patent
LanguageEnglish
French
German
Published 05.12.2007
Subjects
ADVERTISING
BASIC ELECTRIC ELEMENTS
CRYPTOGRAPHY
DISPLAY
DISPLAYING
EDUCATION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LABELS OR NAME-PLATES
PHYSICS
SEALS
SEMICONDUCTOR DEVICES
SIGNS
Online AccessGet full text

Cover

More Information
Summary:A thin film transistor has source (20) and drain (10) electrodes which each comprise a coiled elongate portion. One (14) of these portions coils inwardly to a central connector portion (12), and the other (22) coils outwardly to a peripheral connector portion (16). The two coiled portions are interlinked to define between them a substantially uniform spacing (24) corresponding to a channel region of the transistor. This arrangement enables the length to width ratio of the transistor to be reduced, giving rise to an increased current capacity of the transistor. By making one elongate portion (14) longer than the other (22), the transistor can have a source-gate capacitance lower than its drain-gate capacitance. These transistors may form switching elements in large area electronic devices, such as electroluminescent displays, plasma displays, electrostatic print heads, and X-ray dynamic beam attenuators.
Bibliography:Application Number: EP19990939425