METHOD OF MANUFACTURING SENSOR AND RESISTOR ELEMENT

A sensor in which a field effect transistor element 3 having a gate electrode 6 on its rear side is electrically connected onto a resistive element 2 having a top surface electrode and a bottom surface electrode in such a way that the gate electrode 6 and a portion of the top surface electrode of th...

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Bibliographic Details
Main Authors NOMURA, KOJI, UMEDA, SHINJI, FUJII, HIROSHI, MASUTANI, TAKESHI, IBATA, AKIHIKO
Format Patent
LanguageEnglish
French
German
Published 10.05.2000
Edition7
Subjects
ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS
COLORIMETRY
ELECTRICITY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE
MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
PHYSICS
RADIATION PYROMETRY
TARIFF METERING APPARATUS
TESTING
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Summary:A sensor in which a field effect transistor element 3 having a gate electrode 6 on its rear side is electrically connected onto a resistive element 2 having a top surface electrode and a bottom surface electrode in such a way that the gate electrode 6 and a portion of the top surface electrode of the resistive element 2 coincides, and a grounding electrode 12 on a substrate is electrically connected with the bottom surface electrode of the resistive element 2 so that they coincides.
Bibliography:Application Number: EP19990921210