Process for anisotropic etching of nitride layer with selectivity to oxide

An anisotropic etching process for a nitride layer of a substrate, the process comprising using an etchant gas which comprises a hydrogen-rich fluorohydrocarbon, an oxidant and a carbon source. The hydrogen-rich fluorohydrocarbon is preferably one of CH3F or CH2F2, the carbon source is preferably on...

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Main Authors YU, CHIENFAN, WISE, RICHARD S, NG, HUNG Y, MALINOWSKI, JOHN C, ARMACOST, MICHAEL D, DOBUZINSKY, DAVID M
Format Patent
LanguageEnglish
French
German
Published 04.08.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An anisotropic etching process for a nitride layer of a substrate, the process comprising using an etchant gas which comprises a hydrogen-rich fluorohydrocarbon, an oxidant and a carbon source. The hydrogen-rich fluorohydrocarbon is preferably one of CH3F or CH2F2, the carbon source is preferably one of CO2 or CO, and the oxidant is preferably O2. The fluorohydrocarbon is preferably present in the gas at approximately 7% - 35% by volume, the oxidant is preferably present in the gas at approximately 1% - 35% by volume, and the carbon source is preferably present in the gas at approximately 30% - 92%.
Bibliography:Application Number: EP19990300319