Electron beam resist

A high-resolution patterning method of a resist layer is disclosed by patternwise irradiation of the resist layer with electron beams utilizing a methanofullerene compound as the electron beam resist material, which is graphitized and made insoluble in an organic solvent by the electron beam irradia...

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Bibliographic Details
Main Authors ROBINSON, ALEXANDER PHILLIP GRAHAM, TADA, TETSUYA, PALMER, RICHARD EDWARD, KANAYAMA, TOSHIHIKO
Format Patent
LanguageEnglish
French
German
Published 24.03.1999
Edition6
Subjects
ACYCLIC OR CARBOCYCLIC COMPOUNDS
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
HOLOGRAPHY
MATERIALS THEREFOR
METALLURGY
ORGANIC CHEMISTRY
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Summary:A high-resolution patterning method of a resist layer is disclosed by patternwise irradiation of the resist layer with electron beams utilizing a methanofullerene compound as the electron beam resist material, which is graphitized and made insoluble in an organic solvent by the electron beam irradiation in a dose of, for example, 1 x 10<-4> C/cm or larger. The thus formed resist layer is highly resistant against dry etching to ensure utilizability of the method in the fine patterning work for the manufacture of semiconductor devices.
Bibliography:Application Number: EP19980307566