METHOD AND DEVICE FOR MEASURING DEFECT OF CRYSTAL ON CRYSTAL SURFACE

• Main Authors: WATASE, SHINICHIRO, HIRAIWA, ATSUSHI, ISHIDA, HIDETSUGU, TAKEDA, KAZUO, TAJIMA, TAKESHI
• Format: Patent
• Language: English; French; German
• Published: 30.12.1998
• Edition: 6
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; TESTING

The present invention relates to a method for detecting and measuring crystal defects according to the scattered light from respective crystal defects and allows both size and depth of each of the defects on the entire surface of the sample and with a resolution of a wavelength or under. In the method, two lights (two wavelengths) are applied on a sample for scanning. Each of the two wavelengths of the lights has a penetration depth different three times or over from that of the other. Then, the scattered light from respective defects inside the sample is measured by wavelength thereby to find the size of each of the defects according to the scattered light intensity of the longer wavelength. And, according to the ratio between scattered light intensities, the depth of each defect is found and both depth and size of the defect are displayed in the wafer in-plane distribution of defects. In addition, the observation point of a camera is moved to a specific defect potion detected in the above wide range measurement for scanning thereby to observe each defect pattern with two wavelengths. Thus, both depth and size of each defect are found from the two wavelengths of the scattered light image data of the defect. According to the present invention, therefore, both size and depth of each defect can be measured by observing the defect image through measurement of the entire surface of the sample and through measurement of respective defects when both size and depth must be measured for the defect.