Anti-reflective treatment of reflecting surfaces
A process for photolithography of a layer (3) below a photosensitive resin layer (5) in IC manufacture involves forming a porous layer (4) of the same material and of given thickness within and at the surface of the layer (3) to be lithographically structured, prior to deposition of the resin. Prefe...
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Main Authors | , , |
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Format | Patent |
Language | English French German |
Published |
21.04.2010
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Subjects | |
Online Access | Get full text |
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Summary: | A process for photolithography of a layer (3) below a photosensitive resin layer (5) in IC manufacture involves forming a porous layer (4) of the same material and of given thickness within and at the surface of the layer (3) to be lithographically structured, prior to deposition of the resin. Preferably, the layer (3) to be lithographically structured consist of a conductive or semiconductive material, especially a silicon semiconductor material which can form porous silicon by chemical treatment in a bath containing a silicone type surfactant. |
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Bibliography: | Application Number: EP19970403107 |