Anti-reflective treatment of reflecting surfaces
A process for photolithography of a layer (3) below a photosensitive resin layer (5) in IC manufacture involves forming a porous layer (4) of the same material and of given thickness within and at the surface of the layer (3) to be lithographically structured, prior to deposition of the resin. Prefe...
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Main Authors | , , |
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Format | Patent |
Language | English French German |
Published |
01.07.1998
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | A process for photolithography of a layer (3) below a photosensitive resin layer (5) in IC manufacture involves forming a porous layer (4) of the same material and of given thickness within and at the surface of the layer (3) to be lithographically structured, prior to deposition of the resin. Preferably, the layer (3) to be lithographically structured consist of a conductive or semiconductive material, especially a silicon semiconductor material which can form porous silicon by chemical treatment in a bath containing a silicone type surfactant.
La présente invention a trait à un procédé de photolithographie amélioré, particulièrement adapté aux techniques de lithographie optique à haute résolution utilisant les raies g, h et i du spectre du mercure et les UV à courte longueur d'onde, comprenant, préalablement au dépôt de la résine photosensible sur la couche de matériau à lithographier, la formation d'une couche poreuse anti-réflective au sein même de ladite couche à lithographier et à la surface de celle-ci. |
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Bibliography: | Application Number: EP19970403107 |