SEMIFINISHED PRODUCT FOR ELECTRONIC OR OPTO-ELECTRONIC SEMICONDUCTOR COMPONENT
PCT No. PCT/EP95/02095 Sec. 371 Date Nov. 25, 1996 Sec. 102(e) Date Nov. 25, 1996 PCT Filed Jun. 2, 1995 PCT Pub. No. WO95/34091 PCT Pub. Date Dec. 14, 1995Semifinished products designed as composite bodies for electronic or opto-electronic semiconductor components are known. The composite bodies ar...
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Main Authors | , |
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Format | Patent |
Language | English French German |
Published |
04.03.1998
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | PCT No. PCT/EP95/02095 Sec. 371 Date Nov. 25, 1996 Sec. 102(e) Date Nov. 25, 1996 PCT Filed Jun. 2, 1995 PCT Pub. No. WO95/34091 PCT Pub. Date Dec. 14, 1995Semifinished products designed as composite bodies for electronic or opto-electronic semiconductor components are known. The composite bodies are made of a disk-shaped, transparent quartz glass substrate and a wafer made of a semiconductor material. The directly bonded surfaces of the quartz glass substrate and wafer are polished before being mutually bonded. In order to create a semifinished product that resists temperatures above 900 DEG C., such as those used to produce semiconductor circuits in industrially feasible times, without raising fears of a substantial reduction of the adhesive forces, chipping of the wafers away from each other or an undesirable deformation of the composite body, the substrate quartz glass is a synthetic quartz glass with at least 1014.0 poise viscosity at 950 DEG C. which does not fall below 1012 poise at 1050 DEG C. The synthetic quartz glass contains maximum 1 ppm alkali elements and maximum 1 ppm metallic impurities of the elements iron, nickel, copper, chromium and/or transition metals. At least one of the polished surfaces has a roughness depth Rq not higher than 2 nm. |
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Bibliography: | Application Number: EP19950923223 |