Etching process of CoSi2 layers

Etching process of CoSi2 layers in semiconductor processing by means of a HF-based solution, wherein the etching rate of CoSi2 is controlled by regulating the pH value of the HF-based solution.

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Bibliographic Details
Main Authors JANSEN, PHILIPPE, DONATON, RICARDO ALVES, BAKLANOV, MIKHAIL RODIONOVICH, DEFERM, LUDO, MAEX, KAREN IRMA JOSEF, ROOYACKERS, RITA, VERBEECK, RITA
Format Patent
LanguageEnglish
French
German
Published 16.04.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Etching process of CoSi2 layers in semiconductor processing by means of a HF-based solution, wherein the etching rate of CoSi2 is controlled by regulating the pH value of the HF-based solution.
Bibliography:Application Number: EP19960870078