Wafer bonding of light emitting diode layers

A method of forming a light emitting diode (LED) comprises the steps of providing a first substrate (30); providing a II-VI LED structure (40) on the first substrate; and wafer bonding one of a III-V semiconductor substrate and a SiC substrate (48) to the II-VI LED structure, thereby enhancing stabi...

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Bibliographic Details
Main Authors UEBBING, JOHN, ROBBINS, VIRGINIA M, DEFEVER, DENNIS C, STERANKA, FRANK M, KISH, FRED A
Format Patent
LanguageEnglish
French
German
Published 21.08.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a light emitting diode (LED) comprises the steps of providing a first substrate (30); providing a II-VI LED structure (40) on the first substrate; and wafer bonding one of a III-V semiconductor substrate and a SiC substrate (48) to the II-VI LED structure, thereby enhancing stability of the II-VI LED structure.
Bibliography:Application Number: EP19960106635