APPARATUS FOR THERMAL TREATMENT OF THIN FILM WAFER

• Main Authors: SHIN, JUNG-HO, CHOI, CHANG-HWAN, LEE, HUENG-JIK, KYUNG, HYUN-SU, CHOI, WON-SONG, KIM, SEK-YOUNG
• Format: Patent
• Language: English; French; German
• Published: 17.04.1996
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PCT No. PCT/US95/05281 Sec. 371 Date Jun. 3, 1996 Sec. 102(e) Date Jun. 3, 1996 PCT Filed Apr. 28, 1995 PCT Pub. No. WO95/30121 PCT Pub. Date Nov. 9, 1995An apparatus for thermal treatment of a thin film wafer is disclosed including a vacuum chamber (10) with a heater assembly (20) positioned in the vacuum chamber (10) and a clamp (31) which presses against the wafer positioned on the heater assembly (20) with the force of the weight of the clamp (31). A vacuum generator (60) forms a vacuum in the vacuum chamber (10) and a gas supply network (100) supplies gas into the vacuum chamber (20) to provide a uniform temperature for the thermal treatment of the wafer. A wafer supply mechanism (50) supplies the wafer to the clamp (31) for thermal treatment.