Novolatile semiconductor memory cell capable of saving overwritten cell and its saving method

• Main Authors: IMAMIYA, KENITI, NAKAMURA, HIROSHI
• Format: Patent
• Language: English; French; German
• Published: 19.08.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

If data is read from a selected memory cell (MC1 to MCn) at the time of overwrite verifying, a potential of a bit line is changed in accordance with data. If a transistor (Q1) is turned on, a latch circuit (LT) is set in accordance with data of the bit line (BL1). In a case where there is a memory c...