Field emission type electron emitting device and method of producing the same

In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide la...

Full description

Saved in:
Bibliographic Details
Main Authors MATSUZAKI, KAZUO, FUJI ELECTRIC CO., LTD, NISHIZAWA, MASATO, FUJI ELECTRIC CO., LTD, ITOH, JUNJI, UEMATSU, TAKIHIKO, FUJI ELECTRIC CO., LTD, RYOKAI, YOICHI, FUJI ELECTRIC CO., LTD
Format Patent
LanguageEnglish
French
German
Published 14.02.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55 DEG with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.
Bibliography:Application Number: EP19950112464