Wafer processing reactor
A wafer processing reactor having an input manifold (37) to enable control of a process gas flow profile over a wafer (16) that is being processed. Both process gas relative concentrations and flow rates can be controlled, thereby enabling an increased uniformity of processing across the wafer (16).
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Main Authors | , , |
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Format | Patent |
Language | English French German |
Published |
27.12.1995
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | A wafer processing reactor having an input manifold (37) to enable control of a process gas flow profile over a wafer (16) that is being processed. Both process gas relative concentrations and flow rates can be controlled, thereby enabling an increased uniformity of processing across the wafer (16). |
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Bibliography: | Application Number: EP19950106353 |